用于卫星应用的7-13 GHz MMIC GaN HEMT压控振荡器(vco)

2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI:10.23919/EUMIC.2017.8230699

T. N. T. Do, Mikael Hörberg, S. Lai, Sven-Henrik Wollersjo, Daniel Johansson, H. Zirath, D. Kuylenstierna

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引用次数: 2

摘要

本文报道了一种覆盖7-13 GHz的压控振荡器(VCO)芯片组，在1 MHz偏移时相位噪声优于- 125 dBc/Hz。该芯片组采用GaN HEMT MMIC技术，设计用于卫星转发器。使用6个vco覆盖全范围，每个vco的调谐范围约为1 GHz，输出功率约为5 dBm。选择GaN HEMT技术具有良好的辐射硬度和高功率性能，可以实现未来宽带通信系统所需的高信噪比和良好的远载波相位噪声性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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7–13 GHz MMIC GaN HEMT Voltage-Controlled-Oscillators (VCOs) for satellite applications

This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7–13 GHz with phase noise better than −125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.

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2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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