M. Das, J. Sumakeris, S. Krishnaswami, M. Paisley, A. Agarwal, A. Powell
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Latest advances in high voltage, drift free 4H-SiC p-i-n diodes
The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.
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