{"title":"n型隧道场效应管的多子带半经典模拟","authors":"A. Revelant, P. Palestri, L. Selmi","doi":"10.1109/ULIS.2012.6193389","DOIUrl":null,"url":null,"abstract":"We present a newly developed model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high-κ dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Multi-subband semi-classical simulation of n-type Tunnel-FETs\",\"authors\":\"A. Revelant, P. Palestri, L. Selmi\",\"doi\":\"10.1109/ULIS.2012.6193389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a newly developed model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high-κ dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.\",\"PeriodicalId\":350544,\"journal\":{\"name\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2012.6193389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-subband semi-classical simulation of n-type Tunnel-FETs
We present a newly developed model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high-κ dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
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