Yunjian Jiang, Y. Ishikawa, S. Yoshinaga, T. Honda, Y. Uraoka
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Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell
In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.
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