{"title":"薄膜SOI mosfet的阈值电压变化分析","authors":"S. Masui, M. Tachimori","doi":"10.1109/SOI.1993.344578","DOIUrl":null,"url":null,"abstract":"The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density N/sub SOI/ and SOI film thickness t/sub SOI/.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An analysis of threshold voltage variation in thin-film SOI MOSFETs\",\"authors\":\"S. Masui, M. Tachimori\",\"doi\":\"10.1109/SOI.1993.344578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density N/sub SOI/ and SOI film thickness t/sub SOI/.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analysis of threshold voltage variation in thin-film SOI MOSFETs
The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density N/sub SOI/ and SOI film thickness t/sub SOI/.<>
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