{"title":"利用量子阱混合的势垒增强InGaAs/InAlAs光电探测器","authors":"Gregory B. Tait, D. B. Ameen","doi":"10.1109/ISDRS.2003.1272235","DOIUrl":null,"url":null,"abstract":"A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing\",\"authors\":\"Gregory B. Tait, D. B. Ameen\",\"doi\":\"10.1109/ISDRS.2003.1272235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing
A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.
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