InxSey单层膜的MOCVD生长

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930451

R. Günkel, J. Glowatzki, S. Patil, O. Maßmeyer, S. Chatterjee, A. Beyer, W. Stolz, K. Volz

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引用次数: 0

摘要

利用MOCVD技术在c面蓝宝石表面生长出二维(2D)层状III-VI半导体晶体。找到了一种单层InxSey的生长方案。通过优化生长参数如温度和Se to In比，使生长行为由气液固生长模式转变为逐层生长模式。由于这些令人鼓舞的成就，进一步的进展导致大面积的二维材料沉积有望实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MOCVD Growth of InxSey Monolayers

Two-dimensional (2D) layered III–VI semiconductor crystals were grown on c-plane sapphire by MOCVD. A growth scheme for monolayered InxSey was found. By optimizing the growth parameters such as temperature and Se to In ratio, the growth behaviour changes from a vapor liquid solid growth mode to a layer by layer growth mode. Due to these encouraging achievements, further progress leading to the deposition of 2D materials over large areas is expected.

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2022 Compound Semiconductor Week (CSW)

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