A. Hara, M. Takei, K. Yoshino, F. Takeuchi, M. Chida, N. Sasaki
{"title":"采用DPSS连续波激光横向结晶法，在550/spl℃的非碱玻璃基板上制备了自对准上下金属双栅低温多晶硅TFT","authors":"A. Hara, M. Takei, K. Yoshino, F. Takeuchi, M. Chida, N. Sasaki","doi":"10.1109/IEDM.2003.1269246","DOIUrl":null,"url":null,"abstract":"Self-aligned top and bottom metal double gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated at 550/spl deg/C using the diode pumped solid state (DPSS) CW laser lateral crystallization (CLC) method, on non-alkali glass. The current drivability of these TFTs is eight or nine times as large as that of conventional excimer laser crystallized (ELC) poly-Si TFTs. It was confirmed that the extreme high performance of SAMDG CLC poly-Si TFT was maintained for gate length of 2.0 /spl mu/m.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Self-aligned top and bottom metal double gate low temperature poly-Si TFT fabricated at 550/spl deg/C on non-alkali glass substrate by using DPSS CW laser lateral crystallization method\",\"authors\":\"A. Hara, M. Takei, K. Yoshino, F. Takeuchi, M. Chida, N. Sasaki\",\"doi\":\"10.1109/IEDM.2003.1269246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-aligned top and bottom metal double gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated at 550/spl deg/C using the diode pumped solid state (DPSS) CW laser lateral crystallization (CLC) method, on non-alkali glass. The current drivability of these TFTs is eight or nine times as large as that of conventional excimer laser crystallized (ELC) poly-Si TFTs. It was confirmed that the extreme high performance of SAMDG CLC poly-Si TFT was maintained for gate length of 2.0 /spl mu/m.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-aligned top and bottom metal double gate low temperature poly-Si TFT fabricated at 550/spl deg/C on non-alkali glass substrate by using DPSS CW laser lateral crystallization method
Self-aligned top and bottom metal double gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated at 550/spl deg/C using the diode pumped solid state (DPSS) CW laser lateral crystallization (CLC) method, on non-alkali glass. The current drivability of these TFTs is eight or nine times as large as that of conventional excimer laser crystallized (ELC) poly-Si TFTs. It was confirmed that the extreme high performance of SAMDG CLC poly-Si TFT was maintained for gate length of 2.0 /spl mu/m.
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