自对齐双大马士革建筑中的铜集成

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623680

Morand, Lermé, Palleau, Torres, Vinet, Demolliens, Ulmer, Gobil, Fayolle, Romagna, Le Bihan

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引用次数: 10

摘要

在本文中，我们将展示铜金属化在自对准双大马士革架构中与0.18pm CMOS技术要求的兼容性。这种铜金属化也首次被用作2厘米0.35微米微处理器的第5级金属，用于在200英寸晶圆上的可集成性演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Copper Integration In Self Aligned Dual Damascene Architecture

In this paper, we will demonstrate the compatibility of copper metallization in a Self Aligned Dual Damascene architecture with 0.18pm CMOS technology requirements. This Cu metallization has also been used, for the first time, as the fifth level of metal of a 2cm2 0.35pm microprocessor for integrability demonstration on 200" wafers.

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1997 Symposium on VLSI Technology

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