SOI mosfet热载流子退化的数值模拟

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306855

Qing Lin, M. Zhu, Yan-jun Wu, Xinyun Xie, Zhengxuan Zhang, Cheng-lu Lin

{"title":"SOI mosfet热载流子退化的数值模拟","authors":"Qing Lin, M. Zhu, Yan-jun Wu, Xinyun Xie, Zhengxuan Zhang, Cheng-lu Lin","doi":"10.1109/IWJT.2004.1306855","DOIUrl":null,"url":null,"abstract":"We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Numerical simulation of hot-carrier degradation in SOI MOSFETs\",\"authors\":\"Qing Lin, M. Zhu, Yan-jun Wu, Xinyun Xie, Zhengxuan Zhang, Cheng-lu Lin\",\"doi\":\"10.1109/IWJT.2004.1306855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们提出了一种基于模拟的方法来表征SOI mosfet中的热载子降解，包括热载子注入、载流子输运和载流子在栅极氧化物中的捕获模型。这种方法清楚地说明了SOI mosfet中热载流子退化的物理机制。为了抑制热载子效应，我们还提出了SOI LDDMOSFET结构，并对仿真结果进行了对比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Numerical simulation of hot-carrier degradation in SOI MOSFETs

We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

自引率

0.00%

发文量