Chinmaya Mishra, U. Pfeiffer, R. Rassel, S. Reynolds
{"title":"硅肖特基二极管功率变换器超过100 GHz","authors":"Chinmaya Mishra, U. Pfeiffer, R. Rassel, S. Reynolds","doi":"10.1109/RFIC.2007.380943","DOIUrl":null,"url":null,"abstract":"This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Silicon Schottky Diode Power Converters Beyond 100 GHz\",\"authors\":\"Chinmaya Mishra, U. Pfeiffer, R. Rassel, S. Reynolds\",\"doi\":\"10.1109/RFIC.2007.380943\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380943\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
摘要
本文介绍了基于肖特基势垒二极管(sbd)的电路，采用IBM的0.13 μ m SiGe BiCMOS工艺。电路，如次谐波上变频混频器和倍频器在频率超过100 GHz的硅演示。这些电路可以在硅上以毫米波频率发电。倍频器在110 GHz时的输出功率大于0 dBm，而2X次谐波上变频器在120 GHz时的峰值转换损耗小于3 dB。
Silicon Schottky Diode Power Converters Beyond 100 GHz
This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.
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