{"title":"硅上LNOI对LiNbO3和SiO2/Si表面活化键合的影响","authors":"R. Takigawa, E. Higurashi, T. Asano","doi":"10.23919/LTB-3D.2017.7947443","DOIUrl":null,"url":null,"abstract":"Wafer-level bonding of LiNbO<inf>3</inf> (LN) and Si with thermally grown SiO<inf>2</inf> layer is demonstrated using surface-activated bonding method for the realization of LiNbO<inf>3</inf>-on-Insulator (LNOI) on Si.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si\",\"authors\":\"R. Takigawa, E. Higurashi, T. Asano\",\"doi\":\"10.23919/LTB-3D.2017.7947443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer-level bonding of LiNbO<inf>3</inf> (LN) and Si with thermally grown SiO<inf>2</inf> layer is demonstrated using surface-activated bonding method for the realization of LiNbO<inf>3</inf>-on-Insulator (LNOI) on Si.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si
Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
