P. Abele, I. Kallfass, H. Schumacher, M. Zeuner, T. Muller, T. Hackbarth, U. Konig, D. Chrastina, H. von Kanel
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32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs
Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of /spl plusmn/0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of /spl plusmn/0.8 dB.
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