Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

A new device concept, called the Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) is reported for the first time. The CSTBT forms the n layer under p base between trenches, the n layer stores carriers; as aesult, the carrier distribution of the CSTBT becomes that of the diode. We examined the performance of the CSTBT by simulation and experiment in the case of the blocking voltage of 1700 V, compared to the simple trench IGBT (TIGBT) and the PiN diode. This confirmed the CSTBT is superior to the TIGBT, and the on-state voltage of the CSTBT is almost same as the Vf of the PiN diode. By the fabricated CSTBT, on-state voltage is 1.9 V at 50 A/cm/sup 2/, turn-off time of resistive load switching is about 300 nsec. We realized turn-off current capability of the CSTBT above 250 A/cm/sup 2/.