{"title":"差分电场敏感场效应晶体管(DeFET)的三维模型研究","authors":"M. Ibrahim, Y. H. Ghalab, Wael Badawy","doi":"10.1109/MNRC.2008.4683398","DOIUrl":null,"url":null,"abstract":"This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.","PeriodicalId":247684,"journal":{"name":"2008 1st Microsystems and Nanoelectronics Research Conference","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Toward a 3D model of Differential Electric-Field Sensitive Field Effect Transistor (DeFET)\",\"authors\":\"M. Ibrahim, Y. H. Ghalab, Wael Badawy\",\"doi\":\"10.1109/MNRC.2008.4683398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.\",\"PeriodicalId\":247684,\"journal\":{\"name\":\"2008 1st Microsystems and Nanoelectronics Research Conference\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 1st Microsystems and Nanoelectronics Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MNRC.2008.4683398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 1st Microsystems and Nanoelectronics Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MNRC.2008.4683398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Toward a 3D model of Differential Electric-Field Sensitive Field Effect Transistor (DeFET)
This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.
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