采用130nm InP HBT技术设计的325ghz 8.6-13.6 mW串联功率放大器

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550924

Ahmed S. H. Ahmed, A. Simsek, M. Urteaga, M. Rodwell

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引用次数: 8

摘要

我们报告了两个采用130 nm InP HBT技术的325 GHz串联功率放大器(pa)。该单元电池使用两个串联的晶体管，在325千兆赫时产生8.6毫瓦的功率，并消耗243毫瓦的直流功率。该放大器具有4.3 dB压缩增益和2.2%的功率附加效率(PAE)。其中两个单元进行功率组合，另外两个单元用作驱动级，形成第二个设计，在325 GHz下产生11.36 mW，压缩增益为9.4 dB, PAE为1.09%。325 GHz时小信号增益峰值为16.6 dB, 3db带宽为9 GHz。总功耗为1.12 W，包含焊盘的尺寸为$0.98 \mathbf{mm} \乘以$0.98 \mathbf{mm}$。

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8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology

We report two 325 GHz series-connected power amplifiers (PAs) using 130 nm InP HBT technology. The unit cell, using two series-connected transistors, produces 8.6 mW at 325 GHz and consumes 243 mW DC power. The PA has a 4.3 dB compressed gain and 2.2% power added efficiency (PAE). Two of these cells are then power-combined, and two further cells are used as driver stages, to form the second design, which produces 11.36 mW at 325 GHz with 9.4 dB compressed gain and 1.09% PAE. The peak small signal gain is 16.6 dB at 325 GHz, and the 3-dB bandwidth is 9 GHz. The total power consumed is 1.12 W and the dimensions including the pads are $0.98 \mathbf{mm} \times 0.98 \mathbf{mm}$.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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