性能优化鲁棒性的自适应设计

R. Datta, J. Abraham, A. U. Diril, A. Chatterjee, K. Nowka
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引用次数: 8

摘要

我们提出了自适应设计技术,以补偿制造引起的工艺变化在深亚微米(DSM)集成电路。工艺变化对现代芯片的参数行为有重大影响,而使芯片自配置以跨工艺角最佳工作的自适应设计技术正在迅速发展,成为解决这一问题的潜在解决方案。这种方案有两个主要组成部分,一个感知过程扰动的机制,以及由该机制驱动的一个或多个过程补偿方案。本文提出的自适应设计方案是一种简单、低开销的技术,用于提高DSM CMOS电路的噪声容限,以提高其制造成品率。过程扰动感知方案基于片上延迟测量和基于性能的自适应约束,在面对过程变化时实现了性能优化的对噪声的鲁棒性
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Adaptive Design for Performance-Optimized Robustness
We present adaptive design techniques that compensate for manufacturing induced process variations in deep sub-micron (DSM) integrated circuits. Process variations have a significant impact on parametric behavior of modern chips, and adaptive design techniques that make a chip self-configuring to work optimally across process corners are fast evolving as a potential solution to this problem. Such schemes have two main components, a mechanism for sensing process perturbations, and one or more process compensation schemes that are driven by this mechanism. The adaptive design schemes presented in this paper are simple, low overhead techniques for noise tolerance in DSM CMOS circuits, to enhance their manufacturing yield. The process perturbation sensing scheme is based on on-chip delay measurement with a performance based bound on adaptation, which enables performance optimized robustness to noise in the face of process variations
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