M. Takai, S. Ichihara, S. Abo, F. Wakaya, H. Sayama, T. Eimori, Y. Inoue
{"title":"中能离子散射增强深度分辨率分析技术的超浅砷剖面分析","authors":"M. Takai, S. Ichihara, S. Abo, F. Wakaya, H. Sayama, T. Eimori, Y. Inoue","doi":"10.1109/IWJT.2004.1306763","DOIUrl":null,"url":null,"abstract":"Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering\",\"authors\":\"M. Takai, S. Ichihara, S. Abo, F. Wakaya, H. Sayama, T. Eimori, Y. Inoue\",\"doi\":\"10.1109/IWJT.2004.1306763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering
Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.
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