碳纳米管场效应晶体管源耗尽状态下的应变建模

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628235

Z. Ahmed, M. Chan

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摘要

提出了基于应变结合表面电位的碳纳米管场效应晶体管(CNTFET)致密模型。该模型是第一个考虑源耗尽状态下CNTFET费米能级附近的带隙变化和相应能带开度的应变现象的模型。

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Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor

Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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