A. Dasgupta, P. Rastogi, D. Saha, A. Gaidhane, A. Agarwal, Y. Chauhan
{"title":"铁电材料中多畴开关的建模:在负电容场效应管中的应用","authors":"A. Dasgupta, P. Rastogi, D. Saha, A. Gaidhane, A. Agarwal, Y. Chauhan","doi":"10.1109/IEDM.2018.8614539","DOIUrl":null,"url":null,"abstract":"We present a new multi-domain model for polarization switching in ferroelectric materials. The computationally efficient model captures the time evolution of multi-domain ferroelectrics with good accuracy along with the frequency dependent switching behavior. We have fabricated (PVDF) and measured P-E characteristics of PZT and PVDF capacitors and have validated the model with measurements. The model allows the visualization of time dependent domain switching allowing further physical insights. We have also proposed a method to extract the distribution of domain orientations experimentally.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs\",\"authors\":\"A. Dasgupta, P. Rastogi, D. Saha, A. Gaidhane, A. Agarwal, Y. Chauhan\",\"doi\":\"10.1109/IEDM.2018.8614539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new multi-domain model for polarization switching in ferroelectric materials. The computationally efficient model captures the time evolution of multi-domain ferroelectrics with good accuracy along with the frequency dependent switching behavior. We have fabricated (PVDF) and measured P-E characteristics of PZT and PVDF capacitors and have validated the model with measurements. The model allows the visualization of time dependent domain switching allowing further physical insights. We have also proposed a method to extract the distribution of domain orientations experimentally.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs
We present a new multi-domain model for polarization switching in ferroelectric materials. The computationally efficient model captures the time evolution of multi-domain ferroelectrics with good accuracy along with the frequency dependent switching behavior. We have fabricated (PVDF) and measured P-E characteristics of PZT and PVDF capacitors and have validated the model with measurements. The model allows the visualization of time dependent domain switching allowing further physical insights. We have also proposed a method to extract the distribution of domain orientations experimentally.