Xiqing Wang, J. Hong, Yandong He, Ganggang Zhang, Lin Han, Xing Zhang
{"title":"一种基于环形振荡器的NBTI和PBTI测量可靠性结构","authors":"Xiqing Wang, J. Hong, Yandong He, Ganggang Zhang, Lin Han, Xing Zhang","doi":"10.1109/EDSSC.2013.6628048","DOIUrl":null,"url":null,"abstract":"A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A ring oscillator based reliability structure for NBTI & PBTI measurement\",\"authors\":\"Xiqing Wang, J. Hong, Yandong He, Ganggang Zhang, Lin Han, Xing Zhang\",\"doi\":\"10.1109/EDSSC.2013.6628048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A ring oscillator based reliability structure for NBTI & PBTI measurement
A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.