在柔性聚酰亚胺薄膜中嵌入薄膜电阻、电容器和电感器

T. Lenihan, L. Schaper, Y. Shi, G. Morcan, J. Parkerson
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引用次数: 35

摘要

阿肯色大学的高密度电子中心(HiDEC)正与Sheldahl MCM-L财团和伦斯勒理工学院(RPI)合作,根据ARPA的合同,开发柔性聚酰亚胺薄膜的低成本嵌入式电阻、电容器和电感器。作为多芯片模块(MCM)系统的一部分,将薄膜无源器件嵌入聚酰亚胺层是一种新技术。该设计概念允许在将嵌入式无源器件组装到MCM-L基板之前进行制造和测试。需要嵌入式无源器件作为当前MCM-L和MCM-D技术的增强。以低成本将终端电阻和去耦电容器等器件从PCB板和MCM表面去除到柔性薄膜中的能力将是MCM技术的一个突破。这些设备被制成一个灵活的MCM封装,使用被称为互联网状电源系统(IMPS)的两层互连系统,该系统由阿肯色大学开发并获得专利。IMPS互连拓扑结构包含细线光刻和批量通孔生成,仅在两个金属层上实现平面功率和接地分布以及密集的信号互连。电阻器的材料为NiCr、TaN和CrSi,电容器的材料为Ta/sub x/O/sub y/和BaTiO/sub x/。触点、互连信号线和电源线用铜冶金制成。这些器件采用25 /spl μ m或50 /spl μ m厚的聚酰亚胺薄膜制成,并用相同的聚酰亚胺封装。
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Embedded thin film resistors, capacitors and inductors in flexible polyimide films
The High Density Electronics Center (HiDEC) at the University of Arkansas is working with the Sheldahl MCM-L Consortium and Rensselaer Polytechnic Institute (RPI) to develop low-cost embedded resistors, capacitors, and inductors in flexible polyimide films under an ARPA contract. Embedding thin-film passive devices into polyimide layers as part of a Multichip Module (MCM) system is new. The design concept allows fabrication and testing of embedded passive devices before assembling them into an MCM-L substrate. Embedded passive devices are needed as an enhancement to present day MCM-L and MCM-D technologies. The ability to remove devices such as terminating resistors and decoupling capacitors from the surfaces of PCB boards and MCMs into a flexible film, at low cost, would be a break-through for MCM technology. The devices are made into a flexible MCM package using a 2 layer interconnect system called the Interconnected Mesh Power System (IMPS) developed and patented at the University of Arkansas. The IMPS interconnection topology incorporates fine line lithography and batch via generation to allow planar power and ground distribution, and dense signal interconnection, on only two metal layers. The materials being used are NiCr, TaN, and CrSi for the resistors and Ta/sub x/O/sub y/ and BaTiO/sub x/ for the capacitors. Contacts, interconnecting signal lines, and power lines are made with Cu metallurgy. The devices are made on a 25 /spl mu/m or 50 /spl mu/m thick polyimide film and are encapsulated with the same polyimide.
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