磁光静态事件探测技术进展

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/6104.930955

N. Jacksen, L. Nelsen, D. Boehm, T. Odom

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引用次数: 1

摘要

在1998年EOS/ESD研讨会上介绍的磁光静态事件探测器已经被证明是一种有用的工具，可以检测损坏MR和GMR磁头的低电平瞬变。磁光薄膜特性、器件设计和晶圆制造方法的改进将提高对这些瞬变的灵敏度。描述了封装和性能可重复性方面的改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advances in magneto optical static event detector technology

Magneto-optic static event detectors, introduced at the 1998 EOS/ESD Symposium, have been demonstrated as a useful tool to detect low level transients that damage MR and GMR heads. Improvements in magneto-optic film characteristics, device design, and wafer fabrication methods will result in enhanced sensitivities to those transients. Improvements in packaging and performance repeatability are described.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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