{"title":"边端延伸的4H-SiC SBD击穿特性仿真","authors":"Hongliang Lv, Yimen Zhang, Yu-Ming Zhang","doi":"10.1109/IWJT.2004.1306789","DOIUrl":null,"url":null,"abstract":"A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension\",\"authors\":\"Hongliang Lv, Yimen Zhang, Yu-Ming Zhang\",\"doi\":\"10.1109/IWJT.2004.1306789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306789\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension
A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.
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