用于电源变换器仿真的高压IGBT模块电热模型

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430902

A. Castellazzi, M. Ciappa, W. Fichtner, E. Batista, J. Dienot, M. Mermet-Guyennet

{"title":"用于电源变换器仿真的高压IGBT模块电热模型","authors":"A. Castellazzi, M. Ciappa, W. Fichtner, E. Batista, J. Dienot, M. Mermet-Guyennet","doi":"10.1109/ESSDERC.2007.4430902","DOIUrl":null,"url":null,"abstract":"This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electro-thermal model of a high-voltage IGBT module for realistic simulation of power converters\",\"authors\":\"A. Castellazzi, M. Ciappa, W. Fichtner, E. Batista, J. Dienot, M. Mermet-Guyennet\",\"doi\":\"10.1109/ESSDERC.2007.4430902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.\",\"PeriodicalId\":103959,\"journal\":{\"name\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2007.4430902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文提出了用于电路仿真环境的6.5 kV场阻IGBT模块的紧凑模型开发。该模型考虑了igbt二极管对的实际连接:半导体物理的描述与自热效应相耦合;与封装和布局相关的电磁现象也被考虑在内。仿真实例验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electro-thermal model of a high-voltage IGBT module for realistic simulation of power converters

This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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