G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra
{"title":"AlGaN/GaN modfet中低温浅阱相关输出导纳频散","authors":"G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra","doi":"10.1109/COMMAD.1998.791634","DOIUrl":null,"url":null,"abstract":"In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V<Vds<5.0 V and -1 V<Vg<0 V) and over the temperature range from 77 to 150 K. Depending on the bias conditions, three different activation energies are observed (21.7/spl plusmn/0.7 meV, 6.4/spl plusmn/0.4 meV and 5.3/spl plusmn/0.6 meV) which are attributed to two trapping-centres: the silicon donor in AlGaN, and either surface states in the gate-drain region or interface states at the AlGaN/GaN interface. Additional measurements at high temperatures (600-700 K) indicate the presence of a deep-level trap with an activation energy of approximately 1 eV, in agreement with results reported by others.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs\",\"authors\":\"G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra\",\"doi\":\"10.1109/COMMAD.1998.791634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V<Vds<5.0 V and -1 V<Vg<0 V) and over the temperature range from 77 to 150 K. Depending on the bias conditions, three different activation energies are observed (21.7/spl plusmn/0.7 meV, 6.4/spl plusmn/0.4 meV and 5.3/spl plusmn/0.6 meV) which are attributed to two trapping-centres: the silicon donor in AlGaN, and either surface states in the gate-drain region or interface states at the AlGaN/GaN interface. Additional measurements at high temperatures (600-700 K) indicate the presence of a deep-level trap with an activation energy of approximately 1 eV, in agreement with results reported by others.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs
In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V
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