AlGaN/GaN modfet中低温浅阱相关输出导纳频散

G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra
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引用次数: 23

摘要

本文研究了mocvd生长的Al/sub 0.25/Ga/sub 0.75/N/GaN modfet的输出导纳频散特性。我们的测量在20 Hz至1 MHz的频率范围内进行,在不同的偏置条件下(2.5 V本文章由计算机程序翻译,如有差异,请以英文原文为准。
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Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs
In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V
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