CCD单元结构的严格电磁仿真

T. O. Körner, L. Bomholt, P. Regli, W. Fichtner
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引用次数: 2

摘要

光敏半导体元件的效率受探测器结构内光强的通量和分布的影响。这种强度分布将取决于结构的几何和光学特性。它还取决于入射辐射的性质(即光谱分布、偏振、相干、入射角等)。对于“大型”结构,可以用简单的几何光学模型近似地得到强度分布。然而,如果探测器的特征尺寸在几个波长的数量级,由于几何光学中完全忽略的衍射效应变得越来越重要,这种方法无法产生可靠的结果。在接下来的分析中,光在二维电荷耦合器件(CCD)单元结构中的传播是通过严格的电磁理论建模的,无论是基本结构还是更复杂的微透镜设计,以提高耦合效率。入射辐射参数和结构的几何形状发生了变化,并对其影响进行了论证。
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Rigorous electromagnetic simulation of CCD cell structures
The efficiency of light sensitive semiconductor elements is influenced by the flux and distribution of light intensity within the detector structure. This intensity distribution will depend on the geometric and optical features of the structure. It will also depend on the properties of the incident radiation (i.e., spectral distribution, polarization, coherence, angle of incidence etc.). For "large" structures, an approximation of the intensity distribution can be obtained by means of simple geometrical optics models. If the detector has feature sizes in the order of several wavelengths, however, this method fails to produce reliable results due to the fact that diffraction effects, which are completely ignored in geometrical optics, become more and more important. In the following analysis, light propagation in a 2-dimensional charge coupled device (CCD) cell structure is modelled by means of rigorous electromagnetic theory, both for the basic structure and a more complicated design with a microlens to increase incoupling efficiency. Parameters of the incoming radiation as well as the geometry of the structure are varied and the effects are demonstrated.
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