GaAs器件中重离子数据的质子横截面

D. L. Hansen
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引用次数: 3

摘要

本文报道了利用GaAs器件中重离子数据计算质子SEU截面的方法。使用了许多不同的模型,但在每一个模型中,必须作出调整,以说明砷化镓的密度和电离能不同于硅的事实。利用已发表文献中的质子和重离子横截面数据来检验模型的准确性。
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Proton cross-sections from heavy-ion data in GaAs devices
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.
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