瞬态电荷泵浦技术是高灵敏度SOI MOSFET光电探测器的新技术

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430954

L. Harik, J. Sallese, M. Kayal

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引用次数: 3

摘要

在本文中，我们使用部分耗尽的SOI MOSFET来测量光的强度。利用电荷泵送技术去除体内光生载流子，以保持漏极电流恒定。利用这种技术，可以测量到低至2 mW/m2的通量密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2 mW/m2 were measured.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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