{"title":"用于soc中原位路径定时松弛监测的鲁棒数字传感器IP和传感器插入流","authors":"Mehdi Sadi, L. Winemberg, M. Tehranipoor","doi":"10.1109/VTS.2015.7116292","DOIUrl":null,"url":null,"abstract":"Because of process variations, the post-silicon critical or near-critical paths differ from those identified in the pre-silicon stage. Thus, it has become necessary to extract timing slack information from circuit paths in the post-silicon phase. In this paper, we present a robust digital sensor IP for in-situ timing slack monitoring on actual circuit paths from SoCs. The timing slack data is converted into a digital format and stored in a dedicated scan register chain for easy extraction at any point in time during test and functional modes. A novel layout-aware and netlist-level sensor insertion flow is proposed. The sensor IP has been designed with 32/28nm standard cell library and its performance is demonstrated in the physical design of several benchmark circuits.","PeriodicalId":187545,"journal":{"name":"2015 IEEE 33rd VLSI Test Symposium (VTS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A robust digital sensor IP and sensor insertion flow for in-situ path timing slack monitoring in SoCs\",\"authors\":\"Mehdi Sadi, L. Winemberg, M. Tehranipoor\",\"doi\":\"10.1109/VTS.2015.7116292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Because of process variations, the post-silicon critical or near-critical paths differ from those identified in the pre-silicon stage. Thus, it has become necessary to extract timing slack information from circuit paths in the post-silicon phase. In this paper, we present a robust digital sensor IP for in-situ timing slack monitoring on actual circuit paths from SoCs. The timing slack data is converted into a digital format and stored in a dedicated scan register chain for easy extraction at any point in time during test and functional modes. A novel layout-aware and netlist-level sensor insertion flow is proposed. The sensor IP has been designed with 32/28nm standard cell library and its performance is demonstrated in the physical design of several benchmark circuits.\",\"PeriodicalId\":187545,\"journal\":{\"name\":\"2015 IEEE 33rd VLSI Test Symposium (VTS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 33rd VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2015.7116292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 33rd VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2015.7116292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A robust digital sensor IP and sensor insertion flow for in-situ path timing slack monitoring in SoCs
Because of process variations, the post-silicon critical or near-critical paths differ from those identified in the pre-silicon stage. Thus, it has become necessary to extract timing slack information from circuit paths in the post-silicon phase. In this paper, we present a robust digital sensor IP for in-situ timing slack monitoring on actual circuit paths from SoCs. The timing slack data is converted into a digital format and stored in a dedicated scan register chain for easy extraction at any point in time during test and functional modes. A novel layout-aware and netlist-level sensor insertion flow is proposed. The sensor IP has been designed with 32/28nm standard cell library and its performance is demonstrated in the physical design of several benchmark circuits.