{"title":"晶体管负输入阻抗的负载-拉力测量","authors":"F. de Groote, J. Verspecht, J. Teyssier, R. Quéré","doi":"10.1109/ARFTG.2006.8361669","DOIUrl":null,"url":null,"abstract":"This paper presents a measurement-based way of forecasting some transistor's nonlinear effects. For some particular output impedances of the passive load-pull setup, a strange behavior of the Pout/Pin slopes can be obtained. Thanks to the LSNA, the non linear input impedance can be measured, it is useful to explain this phenomenon. The time domain slopes of a GaN HEMT up to 3.5 W/mm are proposed at these particular loci.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"154 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Load-pull measurement of transistor negative input impedance\",\"authors\":\"F. de Groote, J. Verspecht, J. Teyssier, R. Quéré\",\"doi\":\"10.1109/ARFTG.2006.8361669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a measurement-based way of forecasting some transistor's nonlinear effects. For some particular output impedances of the passive load-pull setup, a strange behavior of the Pout/Pin slopes can be obtained. Thanks to the LSNA, the non linear input impedance can be measured, it is useful to explain this phenomenon. The time domain slopes of a GaN HEMT up to 3.5 W/mm are proposed at these particular loci.\",\"PeriodicalId\":302468,\"journal\":{\"name\":\"2006 68th ARFTG Conference: Microwave Measurement\",\"volume\":\"154 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 68th ARFTG Conference: Microwave Measurement\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2006.8361669\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 68th ARFTG Conference: Microwave Measurement","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2006.8361669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Load-pull measurement of transistor negative input impedance
This paper presents a measurement-based way of forecasting some transistor's nonlinear effects. For some particular output impedances of the passive load-pull setup, a strange behavior of the Pout/Pin slopes can be obtained. Thanks to the LSNA, the non linear input impedance can be measured, it is useful to explain this phenomenon. The time domain slopes of a GaN HEMT up to 3.5 W/mm are proposed at these particular loci.
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