Pub Date : 2006-12-01DOI: 10.1109/ARFTG.2006.8361647
Dylan F. Williams, T. Clement, P. Hale, A. Dienstfrey
We discuss procedures for calibrating high-speed sampling oscilloscopes at the National Institute of Standards and Technology, and the terminology associated with those calibrations. The discussion clarifies not only the calibration procedures, but how to use the calibrations to perform traceable oscilloscope measurements.
{"title":"Terminology for high-speed sampling-oscilloscope calibration","authors":"Dylan F. Williams, T. Clement, P. Hale, A. Dienstfrey","doi":"10.1109/ARFTG.2006.8361647","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361647","url":null,"abstract":"We discuss procedures for calibrating high-speed sampling oscilloscopes at the National Institute of Standards and Technology, and the terminology associated with those calibrations. The discussion clarifies not only the calibration procedures, but how to use the calibrations to perform traceable oscilloscope measurements.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126462231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361650
D. Wisell, N. Keskitalo
In this paper a behavioral power amplifier model that incorporates the average input power level is proposed. The result is a model that can accurately predict the output signal of the amplifier for all input power levels. The model is validated using measurements on a radio base station power amplifier and it is found that it does indeed has improved generalization capabilities with regard to input power level compared to previous models.
{"title":"A behavioral power amplifier model that includes the average power level","authors":"D. Wisell, N. Keskitalo","doi":"10.1109/ARFTG.2006.8361650","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361650","url":null,"abstract":"In this paper a behavioral power amplifier model that incorporates the average input power level is proposed. The result is a model that can accurately predict the output signal of the amplifier for all input power levels. The model is validated using measurements on a radio base station power amplifier and it is found that it does indeed has improved generalization capabilities with regard to input power level compared to previous models.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"8 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134412493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361666
A. Rumiantsev, R. Doerner, P. Sakalas
This article presents the results of accuracy verification of wafer level calibration at cryogenic temperatures based on coplanar calibration standards. For the first time, the electrical characteristics of commercially available coplanar calibration lines were extracted at the temperature of liquid helium. It was demonstrated that the temperature dependent variation of the characteristic impedance of the tested lines is within ±1% tolerance of the nominal value of 50 Ω for a temperature range from room temperature down to 4 K Finally, the accuracy of the LRM+ calibration method at cryogenic temperatures was verified by definition of the worst case error bounds for the measurement of passive devices and compared to the reference NIST multiline TRL.
{"title":"Verification of wafer-level calibration accuracy at cryogenic temperatures","authors":"A. Rumiantsev, R. Doerner, P. Sakalas","doi":"10.1109/ARFTG.2006.8361666","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361666","url":null,"abstract":"This article presents the results of accuracy verification of wafer level calibration at cryogenic temperatures based on coplanar calibration standards. For the first time, the electrical characteristics of commercially available coplanar calibration lines were extracted at the temperature of liquid helium. It was demonstrated that the temperature dependent variation of the characteristic impedance of the tested lines is within ±1% tolerance of the nominal value of 50 Ω for a temperature range from room temperature down to 4 K Finally, the accuracy of the LRM+ calibration method at cryogenic temperatures was verified by definition of the worst case error bounds for the measurement of passive devices and compared to the reference NIST multiline TRL.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125030967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/arftg.2006.8361660
Cui Xiao-hai, Liu Xin-meng
Monte Carlo Method is a kind of statistic simulation method. Many complicated transform and nonlinear problems in mathematic model of metrology can be solved with Monte Carlo Method. So Monte Carlo Method is frequently used for uncertainty analysis in metrology recent years. As to measurement of microwave power, traditional uncertainty analysis ignores or over-estimates some uncertainty because the precise model of uncertainty is too complicated to use. This paper firstly tries to provide a perfect model of microwave power measurement uncertainty and then discusses uncertainty evaluation by Monte Carlo Method including mathematic modeling and Monte Carlo simulation. Analyzed results with Monte Carlo Method are also provided.
{"title":"Uncertainty analysis of microwave power measurement with Monte Carlo method","authors":"Cui Xiao-hai, Liu Xin-meng","doi":"10.1109/arftg.2006.8361660","DOIUrl":"https://doi.org/10.1109/arftg.2006.8361660","url":null,"abstract":"Monte Carlo Method is a kind of statistic simulation method. Many complicated transform and nonlinear problems in mathematic model of metrology can be solved with Monte Carlo Method. So Monte Carlo Method is frequently used for uncertainty analysis in metrology recent years. As to measurement of microwave power, traditional uncertainty analysis ignores or over-estimates some uncertainty because the precise model of uncertainty is too complicated to use. This paper firstly tries to provide a perfect model of microwave power measurement uncertainty and then discusses uncertainty evaluation by Monte Carlo Method including mathematic modeling and Monte Carlo simulation. Analyzed results with Monte Carlo Method are also provided.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116104698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361652
J. Fenton
The case study described in this paper applies a known vector network analyzer comparison technique to an on-wafer measurement environment. The purpose is to investigate and expand upon this technique's applicability for use in validating an on-wafer VNA system of unknown accuracy by comparing it to an on-wafer VNA system of trusted accuracy. The technique involves taking calibrated S-Parameter measurements with each system over a set of validation devices and calculating the measurement differences between the two systems. These differences are then compared to the estimated repeatability uncertainty bounds of the two VNAs in order to validate or invalidate the unknown system's capabilities. Results and limitations of this procedure are discussed.
{"title":"Validation of on-wafer vector network analyzer systems","authors":"J. Fenton","doi":"10.1109/ARFTG.2006.8361652","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361652","url":null,"abstract":"The case study described in this paper applies a known vector network analyzer comparison technique to an on-wafer measurement environment. The purpose is to investigate and expand upon this technique's applicability for use in validating an on-wafer VNA system of unknown accuracy by comparing it to an on-wafer VNA system of trusted accuracy. The technique involves taking calibrated S-Parameter measurements with each system over a set of validation devices and calculating the measurement differences between the two systems. These differences are then compared to the estimated repeatability uncertainty bounds of the two VNAs in order to validate or invalidate the unknown system's capabilities. Results and limitations of this procedure are discussed.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127540444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361670
M. Marchetti, M. Pelk, K. Buisman, M. Spirito, L. D. de Vreede
A low-cost, high-performance vector network analyzer approach for pulsed operation is presented. The proposed setup offers a very high dynamic range which is independent of the measurement pulse width or duty cycle. As result, the presented network analyzer configuration is perfectly suited for the isothermal characterization of RF semiconductor devices and outperforms current commercially available solutions for this purpose in dynamic range and measurement speed.
{"title":"A pulsed network analyzer for high dynamic range isothermal measurements","authors":"M. Marchetti, M. Pelk, K. Buisman, M. Spirito, L. D. de Vreede","doi":"10.1109/ARFTG.2006.8361670","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361670","url":null,"abstract":"A low-cost, high-performance vector network analyzer approach for pulsed operation is presented. The proposed setup offers a very high dynamic range which is independent of the measurement pulse width or duty cycle. As result, the presented network analyzer configuration is perfectly suited for the isothermal characterization of RF semiconductor devices and outperforms current commercially available solutions for this purpose in dynamic range and measurement speed.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127547025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361651
X. Cui, S. Doo, P. Roblin, G. Jessen, R. Rojas, J. Strahler
A versatile real-time multi-harmonic active load-pull system based on the large signal network analyzer (LSNA) is developed for the design of class F RF power amplifiers (PA). The approach previously demonstrated for fundamental-impedance tuning is extended here to the real-time tuning of higher harmonic impedances and a supportive theory provided. The real-time tuning method is demonstrated on a GaN HEMT device. A power added efficiency of 80.96% is demonstrated at 2 GHz.
{"title":"Real-time active load-pull of the 2nd & 3rd harmonics for interactive design of non-linear power amplifiers","authors":"X. Cui, S. Doo, P. Roblin, G. Jessen, R. Rojas, J. Strahler","doi":"10.1109/ARFTG.2006.8361651","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361651","url":null,"abstract":"A versatile real-time multi-harmonic active load-pull system based on the large signal network analyzer (LSNA) is developed for the design of class F RF power amplifiers (PA). The approach previously demonstrated for fundamental-impedance tuning is extended here to the real-time tuning of higher harmonic impedances and a supportive theory provided. The real-time tuning method is demonstrated on a GaN HEMT device. A power added efficiency of 80.96% is demonstrated at 2 GHz.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121771800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361648
N. Ridler
This paper describes a new facility that has been introduced recently to provide traceable scattering parameter measurements in the precision 1.85 mm coaxial line size. The facility uses a Vector Network Analyser (VNA) along with reference air lines to calibrate the VNA and hence establish the characteristic impedance for the S-parameter measurements. Traceability to national standards and the International System of units (SI) is achieved via precision mechanical measurements of the reference air lines. Some typical measurements, with uncertainties, are given showing the performance of this measurement facility operating to 65 GHz.
{"title":"Traceability to national standards for S-parameter measurements of devices fitted with precision 1.85 mm coaxial connectors","authors":"N. Ridler","doi":"10.1109/ARFTG.2006.8361648","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361648","url":null,"abstract":"This paper describes a new facility that has been introduced recently to provide traceable scattering parameter measurements in the precision 1.85 mm coaxial line size. The facility uses a Vector Network Analyser (VNA) along with reference air lines to calibrate the VNA and hence establish the characteristic impedance for the S-parameter measurements. Traceability to national standards and the International System of units (SI) is achieved via precision mechanical measurements of the reference air lines. Some typical measurements, with uncertainties, are given showing the performance of this measurement facility operating to 65 GHz.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114757844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361673
H. Reader, M. Janezic
The open-ended coaxial probe is widely used to measure the dielectric properties of materials. In a recent detailed study of an SMA open-ended probe, where we examined issues of interface higher-order modes, probe lift-off and repeatability, we found several experimental issues to be important. In the study, we do not provide sufficient information on these issues or attempt to define measurement limitations. In this paper, we report on common-mode (CM) currents associated with the probe and specific low-level perturbations seen throughout our data-sets. We discuss practical matters, such as cable stability and lift-off, with the consequences on material property estimation. We conclude with a discussion on the lowest measurable loss tangent obtained by coaxial probe methods.
{"title":"Coaxial probe dielectric measurements: Practical dotting “i's” and crossing “t's”","authors":"H. Reader, M. Janezic","doi":"10.1109/ARFTG.2006.8361673","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361673","url":null,"abstract":"The open-ended coaxial probe is widely used to measure the dielectric properties of materials. In a recent detailed study of an SMA open-ended probe, where we examined issues of interface higher-order modes, probe lift-off and repeatability, we found several experimental issues to be important. In the study, we do not provide sufficient information on these issues or attempt to define measurement limitations. In this paper, we report on common-mode (CM) currents associated with the probe and specific low-level perturbations seen throughout our data-sets. We discuss practical matters, such as cable stability and lift-off, with the consequences on material property estimation. We conclude with a discussion on the lowest measurable loss tangent obtained by coaxial probe methods.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134030168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/ARFTG.2006.8361657
M. He, W. Eisenstadt, R. Fox
In this paper, a down conversion-based embedded substrate noise measurement up to 20 GHz is presented in detail. This on-chip measurement method utilizes a down conversion mixer and shows a measurement range from less than-60 dBm to greater than 2 dBm. Special test structures and measurement circuit were designed and fabricated in a BiCMOS 180nm-technology with a high-resistivity substrate. A semi-physical equivalent circuit model based on experimentally determined data is proposed and has been verified by embedded measurements. Error analysis will be reported later.
{"title":"Broadband embedded substrate noise measurement for RF/Microwave ICs","authors":"M. He, W. Eisenstadt, R. Fox","doi":"10.1109/ARFTG.2006.8361657","DOIUrl":"https://doi.org/10.1109/ARFTG.2006.8361657","url":null,"abstract":"In this paper, a down conversion-based embedded substrate noise measurement up to 20 GHz is presented in detail. This on-chip measurement method utilizes a down conversion mixer and shows a measurement range from less than-60 dBm to greater than 2 dBm. Special test structures and measurement circuit were designed and fabricated in a BiCMOS 180nm-technology with a high-resistivity substrate. A semi-physical equivalent circuit model based on experimentally determined data is proposed and has been verified by embedded measurements. Error analysis will be reported later.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133978773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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