串联10kv SiC mosfet使能三相三电平中性点箝位变换器极的开关损耗分析

Nithin Kolli, Sanket Parashar, Raj Kumar Kokkonda, S. Bhattacharya, V. Veliadis
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引用次数: 1

摘要

SiC mosfet技术的最新进展激发了人们对设计紧凑高开关频率(10 - 20khz)功率转换器的兴趣。然而,在中压(MV)尺度下,这些电源转换器的并网将需要一个传统的变压器。随着新型高压(HV) 10kv和15kv SiC mosfet的发展,这些变换器可以直接与中压(MV)电网接口,而不需要线频变压器,使用简单的二电平和三电平拓扑。目前正在探索这些器件在所有中压应用(8千伏至30千伏)中的应用,如固态变压器,中压驱动器,电力调节系统和MVDC隔离器。本文讨论了10kv SiC mosfet和JBS二极管在异步微电网电力调节系统(AMPCS)中的应用。该中压电源转换器通过设备串联连接,采用三电平中性点箝位(3L-NPC)配置。这些串联设备的电压平衡是通过使用rc缓冲器来实现的。本文讨论了作为三相变换器基本元件的3L-NPC极的不同导通模式和开关顺序。给出了mosfet和箝位二极管在不同缓冲值下的开关损耗分析,并给出了实验结果。这项研究有助于概述通过器件(和散热器)和3L-NPC变换器极中的缓冲电阻消散的开关损耗。
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Switching Loss Analysis of Three-Phase Three- Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs
The recent advancement in the technology of SiC MOSFETs has spurred interest in designing compact and high switching frequency (10–20 kHz) power converters. However, grid-integration of these power converters at medium voltage (MV) scale would require a conventional transformer. With the development of new high voltage (HV) 10 kV and 15 kV SiC MOSFETs, these converters can directly interface with medium voltage (MV) grids without the need for line-frequency transformers, using simple two-level and three-level topologies. The application of these devices is currently being explored in all MV Applications (8 kV to 30 kV) like Solid State Transformer, MV Drives, Power Conditioning Systems, and MVDC isolators. This paper discusses application of 10 kV SiC MOSFETs and JBS Diodes for enabling Asynchronous Microgrid Power Conditioning System (AMPCS). This medium voltage power converter is enabled by series-connection of devices, in a Three-Level Neutral Point Clamped (3L-NPC) configuration. The voltage balancing of these series-connected devices is achieved by using R C-snubbers. This paper addresses the different conduction modes and switching sequences of a 3L-NPC pole, which is used as building block for the three-phase converter. The switching loss analysis, for various snubber values, is presented for the MOSFETs and the clamping diodes along with experimental results. This research helps in providing an overview of switching losses that are disspated through the device (and heatsink) and through the snubber resistor in a 3L-NPC convertor pole.
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