基于半导体单壁碳纳米管阵列/硅异质结的倍他伏打微电池

M. Li, J. Zhang
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引用次数: 5

摘要

本文首次展示了一种基于半导体单壁碳纳米管(s-SWCNT)阵列/硅异质结的新型倍他伏打(BV)微电池。采用传统的微加工工艺和介电泳(DEP)技术在n型硅上制备了p型s-SWCNTs排列阵列,形成p-n异质结作为能量转换。s- SWCNTs阵列/Si p-n异质结的整流特性优于我们之前研究的基于SWCNTs的肖特基结,如Au/s- SWCNTs /Ti和SWCNTs薄膜/Si。在7.8mCi/cm2辐照下,该材料的开路电压(VOC)为62mV,短电流密度(JSC)为3.8μA/cm2,填充系数(FF)为33.4%,能量转换效率(η)为9.8%。结果表明,这种s- swcnts阵列/Si微电池在BV微电池中具有巨大的应用潜力。
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A betavoltaic microcell based on semiconducting single-walled carbon nanotube arrays/Si heterojunctions
In this paper, a novel betavoltaic (BV) microcell based on semiconducting single-walled carbon nanotube (s-SWCNT) arrays/Si heterojunctions are demonstrated for the first time. The aligned arrays of p-type s-SWCNTs were prepared on n-type silicon to form the p-n heterojunctions as energy conversion by the traditional micro-fabrication process and dielectrophoretic (DEP) technology. The s-SWCNT arrays/Si p-n heterojunction displays better rectification characteristics than the SWCNT-based Schottky junctions such as Au/s-SWCNT/Ti and SWCNTs thin film/Si in our previous works. Under 7.8mCi/cm2 63Ni irradiation, the open circuit voltage (VOC) of 62mV, short current density (JSC) of 3.8μA/cm2, fill factor (FF) of 33.4% and energy conversion efficiency (η) of 9.8% were achieved. The results indicated that this s-SWCNT arrays/Si microcell has a huge potential for application in BV microcells.
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