低温红外图像传感器读出集成电路中的单事件瞬态中断和功能中断

L. Artola, A. A. Youssef, S. Ducret, R. Buiron, S. Parola, G. Hubert, C. Poivey
{"title":"低温红外图像传感器读出集成电路中的单事件瞬态中断和功能中断","authors":"L. Artola, A. A. Youssef, S. Ducret, R. Buiron, S. Parola, G. Hubert, C. Poivey","doi":"10.1109/NSREC.2017.8115480","DOIUrl":null,"url":null,"abstract":"This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Single event transient and functional interrupt in readout integrated circuit of infrared image sensors at low temperatures\",\"authors\":\"L. Artola, A. A. Youssef, S. Ducret, R. Buiron, S. Parola, G. Hubert, C. Poivey\",\"doi\":\"10.1109/NSREC.2017.8115480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.\",\"PeriodicalId\":284506,\"journal\":{\"name\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2017.8115480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

本文介绍了两种读出集成电路在低温重离子束流下的单事件瞬态和功能中断的测量。SEFI发生的温度依赖性是有限的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Single event transient and functional interrupt in readout integrated circuit of infrared image sensors at low temperatures
This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Recent radiation test results for trench power MOSFETs Compendium of single event effects test results for commercial-off-the-shelf and standard electronics for low earth orbit and deep space applications Space and terrestrial radiation response of silicon carbide power MOSFETs An improved SEL test of the ADV212 video codec Compendium of current single event effects results from NASA goddard space flight center and NASA electronic parts and packaging program
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1