Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl

Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >