S. Chang, Y. Su, T. Kuan, C. H. Ko, S.C. Wei, W. Lan, Y. Cherng, S.C. Chen
{"title":"具有载流子约束层的氮基hfet","authors":"S. Chang, Y. Su, T. Kuan, C. H. Ko, S.C. Wei, W. Lan, Y. Cherng, S.C. Chen","doi":"10.1109/ISDRS.2003.1272016","DOIUrl":null,"url":null,"abstract":"Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm/sup 2/V/sup -1/sec/sup -1/ by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp/sub 2/Mg flow rate of 2.36/spl times/10/sup -8/ mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Nitride-based HFETs with carrier confinement layers\",\"authors\":\"S. Chang, Y. Su, T. Kuan, C. H. Ko, S.C. Wei, W. Lan, Y. Cherng, S.C. Chen\",\"doi\":\"10.1109/ISDRS.2003.1272016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm/sup 2/V/sup -1/sec/sup -1/ by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp/sub 2/Mg flow rate of 2.36/spl times/10/sup -8/ mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nitride-based HFETs with carrier confinement layers
Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm/sup 2/V/sup -1/sec/sup -1/ by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp/sub 2/Mg flow rate of 2.36/spl times/10/sup -8/ mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.
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