先进CMOS节点的新型热载流子AC-DC设计指南

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4559016

C. Guérin, V. Huard, C. Parthasarathy, J. Roux, A. Bravaix, E. Vincent

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引用次数: 10

摘要

由于电源电压(Vdd)和通道长度(L)不再以相似的比例缩放，因此对电路寿命和器件直流热载流子(HC)应力寿命之间关系的理解对于先进节点变得越来越重要。本文提出了一种新的方法，通过结合精细化的晶体管HC建模，晶圆级可靠性(WLR)和高温工作寿命测试(HTOL)的实验结果和模拟来解决HC风险评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel hot-carrier AC-DC design guidelines for advanced CMOS nodes

The understanding of the relationship between circuit lifetime and device DC hot carrier (HC) stress lifetime is becoming increasingly important for advanced nodes since supply voltage (Vdd) and channel length (L) do not scale anymore in similar proportions. This paper proposes a novel approach to tackle HC risk assessment through a combination of refined transistor HC modeling, Wafer Level Reliability (WLR) & High Temperature Operating Lifetest (HTOL) experimental results and simulations.

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2008 IEEE International Reliability Physics Symposium

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