{"title":"ITO/InP太阳能电池的进展","authors":"T. Gessert, X. Li, M. Wanlass, T. Coutts","doi":"10.1109/ICIPRM.1990.203028","DOIUrl":null,"url":null,"abstract":"The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Progress in the ITO/InP solar cell\",\"authors\":\"T. Gessert, X. Li, M. Wanlass, T. Coutts\",\"doi\":\"10.1109/ICIPRM.1990.203028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<>
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