半绝缘GaAs中肖特基衬垫对有源层肖特基势垒的影响

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.571117

J. Wu, Z.G. Wang, M. Zhang, T. Fan, L.Y. Lin

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摘要

研究发现，侧栅电压对fet的栅极势垒和漏电流通过半绝缘GaAs衬底上的栅极金属衬底的行为有影响。提出了一种简单的机制来解释这一观察结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of the Schottky pad in semi-insulating GaAs on the Schottky barrier in the active layer

It is observed that the sidegate voltage has an influence on the gate barrier of FETs and the behavior of leakage current in substrates via the gate metal pad lying on the semi-insulating GaAs substrate. A simple mechanism is proposed to interpret the observation.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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