商用浮栅可选非易失性存储器的总电离剂量效应

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115457

M. Gadlage, M. Kay, David I. Bruce, A. Roach, A. Duncan, Aaron M. Williams, J. D. Ingalls

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引用次数: 3

摘要

对市售浮栅可选非易失性存储器的总剂量响应进行了表征。将MRAM、FRAM、CBRAM、ReRAM、SONOS和PCRAM器件的响应与相对耐辐射的NAND闪存进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total ionizing dose effects in commercial floating-gate-alternative non-volatile memories

The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM, SONOS, and PCRAM devices are compared to a relatively radiation tolerant NAND flash.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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