高密度电子封装晶圆层积工艺的NCF

K. Honda, T. Enomoto, A. Nagai, N. Takano
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引用次数: 10

摘要

我们开发了一种新型的NCF(不导电薄膜),可以应用于晶圆层合工艺,并显示出优异的粘合性和可靠性。为了提高层压的可加工性,我们提高了NCF的透明度,以便通过NCF识别晶圆上的切割图案或对中标记。结果表明,nfc层合硅片可同时顺利切割。在粘接性能方面,采用高耐热组分,优化淬透性和黏度,使得即使在金锡共晶粘接的高温条件下(>300℃,1s),也能形成优良的粘接部分,填补芯片与衬底之间的狭窄缝隙,无空隙。在可靠性方面,我们发现一种抗氧剂显著地阻止了细间距布线的电化学迁移,并证实了在25 μm间距内具有良好的电子绝缘性能。此外,在NCF中添加助焊剂成分使Cu-solder键合成为可能。从这些特点来看,这种NCF有望成为高密度电子封装的一种有前途的材料,包括具有TSV (Through Silicon Via)的3D封装[1-3]。
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NCF for wafer lamination process in higher density electronic packages
We have developed a novel NCF (Non Conductive Film) which can be applied to the wafer lamination process and shows the excellent bondability & reliability. For lamination processability, we improved the transparency of NCF in order to recognize the dicing pattern or alignment marks on wafer through NCF. As a result, NCF-laminated wafer can be diced simultaneously and smoothly. For the bondability, the use of the high heat-resistant components and the optimization of the hardenability and viscosity made it possible to form the excellent bonding part and fill the narrow gap between chip & substrate without voids even at the high temperature condition (>300 degC for 1s) of Au-Sn eutectic bonding. For the reliability, we found that a kind of antioxidant prevented remarkably the electrochemical migration at finer pitch wiring and we confirmed the good electronic insulation property up to 25 μm pitch. Furthermore, the addition of the flux component into NCF enabled Cu-solder bonding. From these features, this NCF is expected to be a promising material for the high density electronic packages including 3D package with TSV (Through Silicon Via) [1–3].
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