Intersil ISL70023SEH和ISL70024SEH氮化镓功率晶体管位移损伤测试

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115469

N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson

{"title":"Intersil ISL70023SEH和ISL70024SEH氮化镓功率晶体管位移损伤测试","authors":"N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2017.8115469","DOIUrl":null,"url":null,"abstract":"We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Displacement damage testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride power transistors\",\"authors\":\"N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson\",\"doi\":\"10.1109/NSREC.2017.8115469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.\",\"PeriodicalId\":284506,\"journal\":{\"name\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2017.8115469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

简要讨论了氮化镓(GaN)功率场效应晶体管的基本增强模式结构和性能，并报道了Intersil ISL70023SEH和ISL70024SEH GaN功率晶体管的位移损伤(DD)测试结果。

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Displacement damage testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride power transistors

We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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