用于空间应用的工业0.25 μm GaN技术的热性能

2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI:10.23919/EuMIC.2019.8909408

S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck

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引用次数: 0

摘要

本工作的重点是对温度对$0.25- \mu \ mathm {m}$ AlGaN/GaN HEMT性能的影响进行实验和建模分析。在$- 45^{\circ}\mathrm{C}$到+$85^{\circ}\mathrm{C}$的温度范围内，通过直流和负载-拉力测量分析了温度依赖性。本文还研究了二次谐波匹配对谐波阻抗的影响。进行了热建模验证，显示了模型预测器件热行为的良好准确性。在UMS设计了一个20W x波段MMIC。电路级的测量和仿真比较证明了UMS GH25-10在空间应用中的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications

This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \mu \mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{\circ}\mathrm{C}$ to +$85^{\circ}\mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.

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2019 14th European Microwave Integrated Circuits Conference (EuMIC)

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