{"title":"富氢和贫氢环境下双极氧化物辐照和退火过程中辐射诱导缺陷的行为","authors":"X.J. Chen, H. Barnaby, R. Pease, P. Adell","doi":"10.1109/RELPHY.2008.4558871","DOIUrl":null,"url":null,"abstract":"The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients\",\"authors\":\"X.J. Chen, H. Barnaby, R. Pease, P. Adell\",\"doi\":\"10.1109/RELPHY.2008.4558871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients
The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.