{"title":"一种Ku波段变换器集成电路","authors":"T. Kaneko, T. Miya, S. Yoshida","doi":"10.1109/MCS.1992.186025","DOIUrl":null,"url":null,"abstract":"A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Ku band converter IC\",\"authors\":\"T. Kaneko, T. Miya, S. Yoshida\",\"doi\":\"10.1109/MCS.1992.186025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<>
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