从实验室到批量生产的关键步骤:通过数值模拟优化化学镀工艺

S. J. Gräfner, J. H. Huang, Y. A. Chen, P. S. Shih, C. H. Huang, C. Kao
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引用次数: 3

摘要

在芯片封装工业中,化学镀工艺可能是克服焊料技术障碍的最有前途的方法之一,可以缩小细间距互连的规模。为了优化这一过程,我们建议使用数值模拟作为大规模生产的关键步骤。本研究分别建立了矩形和菱形矿柱的两个基本模拟模型。对两种布置方式的压降和进一步的流动特性进行了研究,研究了以下参数:矿柱直径D、节径比S/D、高径比H/D和表面速度u。结果表明,这三个几何参数值越高,压降越低。在高D、低S/D、高H/D和高u的情况下,矩形流型更容易在柱的尾迹和前缘区域之间形成涡,在柱的侧边区域之间形成聚焦流,菱形阵不容易产生涡,更倾向于通过柱的布置形成S型流。然而,由于停滞力的增强,对于大D、高S/D和高H/D,菱形图案的压降往往比矩形图案的压降高得多。此外,所建立的数值模型与文献中的实验数据吻合较好。
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Key steps from laboratory towards mass production: Optimization of electroless plating process through numerical simulation
The electroless plating process is probably one of the most promising methods to overcome the barriers of the solder technology in scaling-down fine-pitch interconnection in the chip packaging industry. To optimize this process, we propose the usage of numerical simulation as a key step towards mass production. This study develops two fundamental simulation models for a rectangular and diamond pattern of pillars, respectively. For both arrangements, the pressure drop and further flow characteristics are investigated dependent on the following parameters: pillar diameter D, pitch-to-diameter ratio S/D and height-to-diameter ratio H/D and superficial velocity U. The results show that a lower pressure drop can be achieved for higher values of these three geometrical parameters. The flow in a rectangular pattern is more likely to form vortices between the wake and front region of the pillars and to form a focused stream between the side areas of the pillars for high D, low S/D, high H/D and high U. The diamond array is less likely for vortex generation and favors to form an S-shaped stream through the arrangement of pillars. However, the pressure drop of the diamond pattern tends to be considerably higher compared to the rectangular counterpart for large D, high S/D and high H/D due to enhanced stagnation forces. Moreover, the developed numerical models show a good match with experimental data from the literature.
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