C. Maneux, J. Goguet, S. Frégonèse, T. Zimmer, H. C. d’Honincthun, S. Galdin-Retailleau
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On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the DC characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits
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