R. Kaneko, R. Katsuhara, R. Yabuki, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka
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Fabrication and Temperature Characteristics of 1550nm InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers with Side Grating
Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm2, and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.
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