{"title":"纳米尺度多栅极mosfet的二维建模","authors":"T. Fjeldly, H. Berli","doi":"10.1109/ICSICT.2008.4734571","DOIUrl":null,"url":null,"abstract":"Precise two-dimensional current and capacitance modeling of short-channel, nanoscale multigate MOSFETs is presented. The model covers a wide range of operating regimes, geometries and material combinations. The modeling in the subthreshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2-D Poisson¿s equation. The results are in excellent agreement with numerical simulations.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"2-D modeling of nanoscale multigate MOSFETs\",\"authors\":\"T. Fjeldly, H. Berli\",\"doi\":\"10.1109/ICSICT.2008.4734571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Precise two-dimensional current and capacitance modeling of short-channel, nanoscale multigate MOSFETs is presented. The model covers a wide range of operating regimes, geometries and material combinations. The modeling in the subthreshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2-D Poisson¿s equation. The results are in excellent agreement with numerical simulations.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precise two-dimensional current and capacitance modeling of short-channel, nanoscale multigate MOSFETs is presented. The model covers a wide range of operating regimes, geometries and material combinations. The modeling in the subthreshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2-D Poisson¿s equation. The results are in excellent agreement with numerical simulations.
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